[Poster Presentation]A Datasheet-Based Loss Model and Efficiency Analysis for Vienna Rectifiers Using SiC Power Devices

A Datasheet-Based Loss Model and Efficiency Analysis for Vienna Rectifiers Using SiC Power Devices

ID：157 Submission ID：74 View Protection：PUBLIC Updated Time：2020-10-15 20:04:31 Hits：274 Poster Presentation

Start Time：2020-11-04 14:40 （Asia/Shanghai）

Duration：5min

Session：[G] Poster session » [G2] Poster Session 2 and Poster Session 7

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Abstract

This paper proposes a datasheet-based loss model and efficiency analysis of the SiC power devices based on three-phase three-level Vienna rectifier. Detailed power loss model for the semiconductor devices in the Vienna rectifier using carrier-based PWM (CB-PWM) modulation is presented. The power loss distribution over the semiconductor devices is compared among four different SiC MOSFETs and the optimal semiconductor is selected. Based on the calculated power loss, the thermal design is done and a maximum temperature rise of 69.29℃ in power devices is observed according to the simulation result. Finally an air-forced cooled, 100kHz, 55kW Vienna rectifier is demonstrated and the semiconductor efficiency achieves 98.6%.

Keywords

Vienna rectifier, SiC semiconductor power devices, switching loss, power loss, thermal design

Speaker

Weijie Hua

Huazhong University of Science and Technology；School of Electrical and Electronic Engineering

Submission Author

Weijie Hua Huazhong University of Science and Technology；School of Electrical and Electronic Engineering

Li Peng Huazhong University of Science and Technology;School of Electrical and Electronic Engineering

Teng Liu Huazhong University of Science and Technology;School of Electrical and Electronic Engineering

Cai Chen Huazhong University of Science and Technology；State Key Laboratory of Advanced Electromagnetic Engineering and Technology

Xinmin Liu Huazhong University of Science and Technology;School of Electrical and Electronic Engineering

Yong Kang Huazhong University of Science and Technology;School of Electrical and Electronic Engineering