[Oral Presentation]Comparative Analysis of CM EMI for Boost Converter Using Si/SiC hybrid switch

Comparative Analysis of CM EMI for Boost Converter Using Si/SiC hybrid switch

ID：28 Submission ID：111 View Protection：ATTENDEE Updated Time：2020-10-15 14:16:03 Hits：253 Oral Presentation

Start Time：2020-11-02 15:15 （Asia/Shanghai）

Duration：15min

Session：[B] Power Electronics Technology and Application » [B1] Session 3 and Session 8

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Abstract

The combination of the Si IGBT and SiC MOSFET inside the Si/SiC hybrid switch will bring serious conducted electromagnetic interference (EMI) noise in the application of the power converters. Compared with the differential mode (DM) EMI noise, the common mode (CM) EMI noise has a greater impact on the total conducted EMI noise, and it is relatively difficult to suppress the common mode EMI noise. However, there is still lack of research on the CM EMI emission characteristics of Si/SiC hybrid switch based converters. In this paper, the CM EMI noise caused by the Si/SiC hybrid switch, Si IGBT, and SiC MOSFET are compared at first. Then, the influence of different current ratios of the Si/SiC hybrid switch on the CM EMI is analyzed

Keywords

Si/SiC hybrid switch, CM, EMI

Speaker

Bo Hu

College of Electrical and Information Engineering； Hunan University

Submission Author

Bo Hu College of Electrical and Information Engineering； Hunan University

Zishun Peng Hunan University

Pei Xiao Hunan University

Yuxing Dai Wenzhou University

Chao Zhang College of Electrical and Information Engineering； Hunan University

Jun Wang Hunan University